Evaluation of Ultrahigh-Voltage 4H-SiC Gate Turn-OFF Thyristors and Insulated-Gate Bipolar Transistors for High-Power Applications

Autor:	Staffan Norrga, Daniel Johannesson, Hans-Peter Nee, Muhammad Nawaz
Rok vydání:	2022
Předmět:	Materials science business.industry Bipolar junction transistor Thyristor Hardware_PERFORMANCEANDRELIABILITY Power (physics) Turn off Hardware_INTEGRATEDCIRCUITS Optoelectronics Hardware_ARITHMETICANDLOGICSTRUCTURES Electrical and Electronic Engineering business Hardware_LOGICDESIGN Voltage
Zdroj:	IEEE Transactions on Power Electronics. 37:4133-4147
ISSN:	1941-0107 0885-8993
DOI:	10.1109/tpel.2021.3122988
Popis:	Evaluation of Ultrahigh-Voltage 4H-SiC Gate Turn-Off Thyristors and Insulated-Gate Bipolar Transistors for High-Power Applications
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4c59b20f4cb50ef1584693a7076693fe https://doi.org/10.1109/tpel.2021.3122988 Zobrazit plný text záznamu