Characterization of Doped Silicon Thermometers for Very High Sensitivity Cryogenic Bolometers
| Autor: | L. Rodriguez, Albrecht Poglitsch, O.-A. Adami, S. Bounissou, V. Reveret, Laurent Dussopt, Jean-Luc Sauvageot, A. Aliane, V. Goudon |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Detector Doping Bolometer chemistry.chemical_element Spica Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Characterization (materials science) law.invention 010309 optics Semiconductor chemistry Far infrared law 0103 physical sciences Optoelectronics General Materials Science business |
| Zdroj: | Journal of Low Temperature Physics. 193:415-421 |
| ISSN: | 1573-7357 0022-2291 |
| Popis: | Understanding the origin and early evolution of stars is one of the fundamental objectives of astronomy. This can be possible with observations made from space in the mid- to far-infrared and millimeter-wave part of the spectrum which require detectors with very high sensitivity. In the framework of the SPICA project and the course of developing cooled semiconductor bolometers for sub-millimeter-wave detection, typically 100 μm ≤ λ ≤ 1.5 mm, we have investigated several thermometers based on doped silicon Si:P,B. We observed an important dependence of the Si:P,B resistance to the doping densities and found potential thermometers for cryogenic detections at very low temperatures (50 mK |
| Databáze: | OpenAIRE |
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