Cryogenic amplifier for ∼1 MHz with a high input impedance using a commercial pseudomorphic high electron mobility transistor
| Autor: | A. M. Robinson, V. I. Talyanskii |
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| Rok vydání: | 2004 |
| Předmět: | |
| Zdroj: | Review of Scientific Instruments. 75:3169-3176 |
| ISSN: | 1089-7623 0034-6748 |
| DOI: | 10.1063/1.1790586 |
| Popis: | A cryogenic amplifier for ∼100 kHz to a few MHz is presented which uses a commercially available pseudomorphic GaAs/InGaAs high electron mobility transistor and dissipates less than 0.5 mW in the cryogenic stage. The input-referred voltage noise and current noise of the amplifier at approximately 2 MHz are measured to be approximately 0.7 nV Hz−1/2 and 25 fA Hz−1/2, respectively. A superconducting resonant circuit can be used to provide a high input impedance over a narrow bandwidth, or a low input impedance can be used to yield a large bandwidth. Although suitable for many applications, the amplifier has been developed for measurements of current noise from a high-impedance source, and its long-term stability is such that by averaging over 30 min, it could be used to detect approximately 0.6 fA Hz−1/2. |
| Databáze: | OpenAIRE |
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