Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates
| Autor: | A. N. Klochkov, G. B. Galiev, I. N. Trunkin, S. S. Pushkarev, I. S. Vasil’evskii, A. L. Vasiliev, A. N. Vinichenko, E. A. Klimov |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Superlattice Stacking General Chemistry Substrate (electronics) 010403 inorganic & nuclear chemistry Condensed Matter Physics Epitaxy 01 natural sciences 0104 chemical sciences Transmission electron microscopy 0103 physical sciences Optoelectronics General Materials Science Ingaas inalas Crystallite business Layer (electronics) |
| Zdroj: | Crystallography Reports. 65:496-501 |
| ISSN: | 1562-689X 1063-7745 |
| Popis: | The structural characteristics of {InGaAs/InAlAs} superlattices, grown by molecular-beam epitaxy (MBE) at a temperature of 200°C on InP substrates with the crystallographic orientations (100) and (111)A, have been investigated. The superlattices consist of 100 periods of alternating In0.53Ga0.47As and In0.52Al0.48As layers with nominal thicknesses of 12 and 8 nm, respectively. The structural quality of the samples has been investigated by transmission electron microscopy (TEM). It is shown that the superlattice on the InP(100) substrate is single-crystal with high concentration of stacking faults, twins, and small-angle domains. The superlattice on the InP(111)A substrate is polycrystalline; however, the grown layers can be traced throughout almost the entire superlattice. A wave-like curvature of the layers grown on the InP(111)A substrate is much larger than that of the layers grown on the InP(100) substrate: the angular ranges of layer deviation from the horizontal growth plane reach ±30° and ±18°, respectively. |
| Databáze: | OpenAIRE |
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