| Autor: |
Christina DiMarino, Qiang Li, Hannes Stahr, Gibong Son, Mike Morianz, Jack Knoll |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 IEEE Energy Conversion Congress and Exposition (ECCE). |
| DOI: |
10.1109/ecce47101.2021.9596034 |
| Popis: |
This work presents a PCB-embedded silicon carbide (SiC) MOSFET half-bridge module with low loop inductances, double-sided cooling, and integrated gate driver. 1.2 kV SiC MOSFET die are embedded in FR4 using a process developed by AT&S and are electrically connected and cooled through carefully placed copper-filled microvias. The electro-thermal codesign described here limited the power-loop inductance to 2.3 nH and the maximum junction temperature to less than $175 ^{\circ}\mathrm{C}$. Furthermore, integration of the gate drive circuitry within the module limited the gate-loop inductances to 2.2 nH and allowed for a high power density. The measured junction-to-case thermal resistance with double-sided cooling is 0.12 K/W, which is 57 % lower than that of a TO-247 package. A peak efficiency of 98.2 % was achieved when the PCB-embedded half-bridge modules were tested in a 22 kW three-phase ac-dc converter. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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