Strain control in germanium nanowires: the use of a silicon nitride shell
Autor: | Ludovic Dupré, Quentin Benoit à la Guillaume, Hubert Renevier, Thérèse Gorisse, Denis Buttard, Pascal Gentile |
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Rok vydání: | 2014 |
Předmět: |
X-ray spectroscopy
Nanostructure Materials science business.industry Scanning electron microscope Shell (structure) Nanowire chemistry.chemical_element Nanotechnology Heterojunction Germanium Condensed Matter Physics chemistry.chemical_compound Silicon nitride chemistry Optoelectronics General Materials Science business |
Zdroj: | physica status solidi (RRL) - Rapid Research Letters. 8:317-320 |
ISSN: | 1862-6254 |
DOI: | 10.1002/pssr.201409050 |
Popis: | The core–shell geometry is a strong tool for inducing and controlling strains in nano-objects in order to tune their optoelectronic properties. We synthesized and characterized core–shell nanostructures by depositing a non-epitaxial silicon nitride shell around germanium nanowires. Scanning electron microscopy as well as energy dispersive X-ray spectroscopy confirms the structural integrity of the heterostructures, and grazing incidence X-ray diffraction measurements reveal the presence of a radial tensile strain in the Ge nanowires. A control of this strain is then demonstrated up to 0.3% by adjusting the SiNx shell thickness versus Ge nanowire diameter. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
Databáze: | OpenAIRE |
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