Module and System Considerations to Maximize Performance Advantages of SiC Power Devices
| Autor: | Ty McNutt, Kraig Olejniczak, Ajith Wijenayake, Jonathan Hayes, Stephen Minden, Daniel Martin, David Simco |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry Mechanical Engineering 020208 electrical & electronic engineering 05 social sciences Electrical engineering System optimization 02 engineering and technology Condensed Matter Physics Mechanics of Materials Power module MOSFET 0202 electrical engineering electronic engineering information engineering Gate driver Inverter 0501 psychology and cognitive sciences General Materials Science Power semiconductor device business 050107 human factors |
| Zdroj: | Materials Science Forum. 924:883-886 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.924.883 |
| Popis: | This paper extends a previously presented SiC power module design philosophy to critical, higher-level components for increased system performance, namely the DC bussing and DC link capacitor design. The DC bussing is essential to connect the DC bulk capacitors to the high-speed power modules and it is imperative that low inductance is maintained while current carrying capability and temperature be maintained. Often, high frequency capacitors are added to systems to increase performance by compensating for extra stray inductance that the DC bussing can introduce. However, issues that may arise by doing such are presented and it is shown that the best solution is to optimize the DC bus structure rather than compensate for a poor design. Finally, the implemented bussing is shown and full power system results presented for the inverter stack-up design. |
| Databáze: | OpenAIRE |
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