Monolayer MoS2 growth at the Au–SiO2 interface
| Autor: | Toshifumi Irisawa, Hong En Lim, Yasumitsu Miyata, Yusuke Nakanishi, Yutaka Maniwa, Naoya Okada, Mitsuhiro Okada, Takahiko Endo |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Fabrication Interface (Java) business.industry Transistor Nanotechnology 02 engineering and technology Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Semiconductor law Monolayer General Materials Science 0210 nano-technology business |
| Zdroj: | Nanoscale. 11:19700-19704 |
| ISSN: | 2040-3372 2040-3364 |
| DOI: | 10.1039/c9nr05119h |
| Popis: | Atomically thin transition-metal dichalcogenides (TMDs) are attracting great interest for future electronic applications. Even though much effort has been devoted to preparing large-area, high-quality TMDs over the past few years, the samples are usually grown on substrate surfaces. Here, we demonstrate the direct growth of a MoS2 monolayer at the interface between a Au film and a SiO2 substrate. MoS2 grains were nucleated below Au films deposited on SiO2via interface diffusion and then grown into a continuous MoS2 film. By programming the Au pattern deposited, controlled growth of MoS2 with the desired size and geometry was achieved over preferred locations, facilitating its integration into functional field-effect transistors. Our findings elucidate the fabrication of a two-dimensional semiconductor at the interface of bulk three-dimensional solids, providing a novel means for establishing a clean interface junction. It also offers a promising alternative to the site-selective synthesis of TMDs, which is expected to aid the fabrication of TMD-based nanodevices. |
| Databáze: | OpenAIRE |
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