Investigation of surface recombination and carrier lifetime in 4H/6H-SiC
| Autor: | Nils Nordell, Vytautas Grivickas, M. Frischholz, Susanne Karlsson, Augustinas Galeckas, Jan Linnros, K. Rottner |
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| Rok vydání: | 1999 |
| Předmět: |
Surface (mathematics)
Materials science Passivation Mechanical Engineering Oxide Analytical chemistry Polishing Carrier lifetime Condensed Matter Physics Molecular physics chemistry.chemical_compound Quality (physics) chemistry Mechanics of Materials General Materials Science Free carrier absorption Recombination |
| Zdroj: | Materials Science and Engineering: B. :239-243 |
| ISSN: | 0921-5107 |
| Popis: | A spatially and time-resolved free carrier absorption method is applied to quantify surface recombination losses as compared to the bulk in 4H- and 6H-SiC structures. The observed carrier lifetime variation is discussed in terms of crystalline quality, top-surface properties and junction effects at the epilayer-substrate interface. Surface recombination parameters in epilayers with differently processed surfaces are extracted from fitting experimental data with numerical simulations. The as-grown bare epilayer is characterized by 10 4 cm s −1 surface recombination velocity. Mechanical polishing increases this parameter to 5×10 5 cm s −1 . No noticeable passivation of 6H-SiC surface by an oxide film is observed, whereas an increase of the surface recombination velocity up to 10 5 cm s −1 has been detected after dry oxidation of 4H-SiC. |
| Databáze: | OpenAIRE |
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