An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures
| Autor: | Nikolai A. Maleev, P. S. Kopjev, Zh. I. Alferov, I. A. Zamoryanskaya, V. T. Punin, V. M. Ustinov, S. G. Konnikov, M. A. Yagovkina, R. I. Ilkaev, Pavel N. Brunkov, A. A. Gutkin, A. V. Bobyl, Yu. G. Musikhin, D. A. Sakseev |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Oxide Heterojunction Radiation Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Transmission electron microscopy X-ray crystallography Surface roughness Optoelectronics Irradiation business Layer (electronics) |
| Zdroj: | Semiconductors. 40:687-690 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | The influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs transistor heterostructures has been studied by means of X-ray diffraction analysis and transmission electron microscopy. It was found that irradiation with doses exceeding ∼3 × 107 rad leads to destruction of the GaAs layer on the surface of these structures. An irradiation dose of 108 rad significantly deteriorates the surface planarity, with the surface roughness reaching values of several nanometers. In addition, dislocations are formed in the cap layer of the structure. Such a behavior of the cap layer may be due to the existence of an oxide layer on its free surface and to the possible chemical reactions, induced by gamma radiation, between atoms of the cap layer and free radicals formed in the oxide and in the ambient atmosphere. No noticeable changes in the structure and composition of the thin InGaAs channel layer occur at doses lower than 108 rad. |
| Databáze: | OpenAIRE |
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