High-k/metal gate stacks in gate first and replacement gate schemes

Autor:	Chorng-Ping Chang, Haichun Yang, Sree Rangasai V. Kesapragada, Naomi Yoshida, Zhigang Xie, Miller Allen, Rongjun Wang, Dave Liu, Xianmin Tang, Srinivas Gandikota, Guojun Liu, Jianxin Lei, Zhenbin Ge, Kevin Moraes, Steven Hung, Yu Lei, Xinliang Lu
Rok vydání:	2010
Předmět:	Materials science business.industry Gate dielectric chemistry.chemical_element Time-dependent gate oxide breakdown PMOS logic chemistry Gate oxide Electronic engineering Optoelectronics business Metal gate Tin NMOS logic High-κ dielectric
Zdroj:	2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Popis:	In this work, representative high-k/metal gate MOS-capacitor stacks were fabricated in both gate first and replacement gate integration schemes. Aluminum- and lanthanum- based cap layers (both widely accepted as Vt tuning cap layers in the industry), in addition to TiN metal gate, can tune the effective workfunction towards PMOS and NMOS, respectively. Varying Ti:N stoichiometry in TiN can induce >250mV change in TiN workfunction. 1 volt separation between NMOS and PMOS was achieved by screening various workfunction materials in replacement gate scheme. Substrate modification during the growth of aluminum was key to achieving void-free aluminum gap fill in narrow gate trenches.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::46d21e4a70f7f6d17f3c9acae8451efa https://doi.org/10.1109/asmc.2010.5551460 Zobrazit plný text záznamu