GeSn Heterojunction LEDs on Si Substrates
| Autor: | Martin Kittler, Michael Oehme, Erich Kasper, Tzanimir Arguirov, Gregor Mussler, Martin Gollhofer, Dan Buca, Roman Körner, Konrad Kostecki, M. Schmid, Jörg Schulze, Mathias Kaschel, Kaiheng Ye |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Band gap business.industry Doping Heterojunction Electroluminescence Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Light intensity law Optoelectronics Direct and indirect band gaps Electrical and Electronic Engineering business Light-emitting diode Molecular beam epitaxy |
| Zdroj: | IEEE Photonics Technology Letters. 26:187-189 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2013.2291571 |
| Popis: | GeSn on Si light-emitting diodes (LEDs) is investigated for different Sn concentrations up to 4.2% and they are compared with an LED made from pure Ge on Si. The LEDs are realized from in-situ doped pin junctions in GeSn on Ge virtual substrates. The device structures are grown with a special ultra-low temperature molecular beam epitaxy process. All LEDs clearly show direct bandgap electroluminescence emission at room temperature. The light intensity of the compressively strained GeSn LEDs increases with higher Sn concentration. The in-plane strain of the LEDs is determined with reciprocal space mapping. The bandgap energies of the emitting GeSn layer are calculated from the emission spectra. |
| Databáze: | OpenAIRE |
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