A compact 5–6 GHz T/R module based on SiGe BiCMOS and SOI that enhances 256 QAM 802.11ac WLAN radio front-end designs

Autor:	Bill Vaillancourt, Chun-Wen Paul Huang, Lui Ray Lam, Mark Johnson, Anthony Francis Quaglietta, Mark M. Doherty
Rok vydání:	2014
Předmět:	Attenuator (electronics) Front and back ends Engineering business.industry dBm Electrical engineering Silicon on insulator Linearity Quad Flat No-leads package BiCMOS business Quadrature amplitude modulation
Zdroj:	WAMICON 2014.
DOI:	10.1109/wamicon.2014.6857790
Popis:	A compact high linearity 4.9-5.9 GHz T/R FEM is presented, which consists of a SiGe BiCMOS PA and a SOI switched LNA realized in an ultra-compact 2.3 × 2.3 × 0.33 mm3 QFN package. The Tx chain has > 30 dB gain and meets -35 dB DEVM up to 17 dBm at 3.3 V and 20 dBm at 5V, insensitive to modulation bandwidths and transmission data length up to 4 mS. With digital pre-distortion (DPD), the PA can be down-biased to save 30 mA while maintaining its linearity. The Rx chain features
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::464f183bc0f1182396b38418fec7dd0c https://doi.org/10.1109/wamicon.2014.6857790 Zobrazit plný text záznamu