Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors
| Autor: | Masahiko Higashi, Jiro Yugami, S. Yamanari, Masao Inoue, Kenichi Mori, Kazuhito Honda, Yukio Nishida, M. Mizutani, Hidefumi Yoshimura, Takaaki Kawahara, S. Sakashita, Masahiro Yoneda, Junichi Tsuchimoto, Naofumi Murata |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry General Engineering General Physics and Astronomy chemistry.chemical_element engineering.material Titanium nitride chemistry.chemical_compound Semiconductor Polycrystalline silicon chemistry engineering Deposition (phase transition) Optoelectronics Field-effect transistor Work function business Tin Metal gate |
| Zdroj: | Japanese Journal of Applied Physics. 46:1859-1864 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.46.1859 |
| Popis: | We have investigated a polycrystalline silicon (poly-Si)/chemical vapor deposited titanium nitride (CVD-TiN) stacked structure as a metal gate with a high-k for p-type metal insulator semiconductor field effect transistors (p-MISFETs). A divided-CVD method provided an appropriate effective work function (4.9–5.2 eV) on HfSiON for p-MISFETs. However, the deposition of poly-Si on CVD-TiN films shifted the effective work function to a midgap (~4.6 eV), and Ti, Hf, and Si diffused into poly-Si/CVD-TiN/high-k structures during poly-Si deposition. Then, we found that an increase in the deposition temperature of CVD-TiN films and the insertion of a physical vapor deposited (PVD)-TiN film between the poly-Si and CVD-TiN layers are effective in suppressing these diffusions. In particular, the insertion of the PVD-TiN film provided an appropriate effective work function of 4.9 eV. Therefore, we found that the diffusion control techniques for poly-Si/TiN/high-k stacked structures are highly effective for obtaining the appropriate work function for p-MISFETs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|