Low‐power 850 nm optoelectronic integrated circuit receiver fabricated in 65 nm complementary metal–oxide semiconductor technology

Autor:	Woo Young Choi, Myung-Jae Lee, Wang Soo Kim, Kang-Yeob Park, Jinsung Youn
Rok vydání:	2015
Předmět:	Transimpedance amplifier Materials science business.industry Amplifier Electrical engineering Photodetector Optical power CMOS Control and Systems Engineering Low-power electronics Inverter Electrical and Electronic Engineering business Electronic circuit
Zdroj:	IET Circuits, Devices & Systems. 9:221-226
ISSN:	1751-8598 1751-858X
Popis:	The authors present a low-power 850 nm Si optoelectronic integrated circuit (OEIC) receiver fabricated in standard 65 nm complementary metal–oxide semiconductor (CMOS) technology. They analyse power consumption of previously reported CMOS OEIC receivers and determine the authors receiver architecture for low-power operation. Their OEIC receiver consists of a CMOS-compatible avalanche photodetector and electronic circuits that include an inverter-based transimpedance amplifier, a tunable equaliser and a post amplifier. With the fabricated OEIC receiver, they successfully demonstrate 8 Gb/s operation with a bit-error rate
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4539e1fc613defaa188666db5f1cf9c3 https://doi.org/10.1049/iet-cds.2014.0250 Zobrazit plný text záznamu Plný text