Optical spectroscopy on InGaAs/GaAs quantum wires defined by selective barrier removal

Autor:	Alfred Forchel, Ch. Gréus, Monika Emmerling, J. Straka, K. Pieger, G. Mauckner
Rok vydání:	1992
Předmět:	Materials science Condensed matter physics business.industry Ingaas gaas Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Modulation Materials Chemistry Optoelectronics business Spectroscopy Quantum Quantum well
Zdroj:	Surface Science. 267:263-266
ISSN:	0039-6028
DOI:	10.1016/0039-6028(92)91133-v
Popis:	We have developed InGaAs/GaAs wires by using the lateral modulation of the top barrier material of the quantum well substrates to obtain a lateral confinement. Our approach provides buried wires without the creation of defects in the active regions. Therefore we obtain high quantum efficiencies from wires with lateral dimensions down to 35 nm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::45302e981255032183274e51eb50e8dd https://doi.org/10.1016/0039-6028(92)91133-v Zobrazit plný text záznamu