Direct Laser Doping of Poly-Silicon Thin Films Via Laser Chemical Processing
| Autor: | Per I. Widenborg, N. Palina, S. Virasawmy, Bram Hoex, Alan Prem Kumar, A. A. O. Tay, Hui Ru Tan, Goutam Kumar Dalapati |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Dopant Silicon Doping Analytical chemistry chemistry.chemical_element Condensed Matter Physics Laser Electronic Optical and Magnetic Materials law.invention Secondary ion mass spectrometry chemistry Electrical resistivity and conductivity law Electrical and Electronic Engineering Thin film Sheet resistance |
| Zdroj: | IEEE Journal of Photovoltaics. 3:1259-1264 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2013.2278662 |
| Popis: | Laser chemical processing (LCP) is an attractive doping technique for thin films due to its process simplicity, high achievable doping concentrations, and relatively shallow doping depths. During LCP processing, an infinite supply of dopants is available from the pressurized doping medium. In this paper, LCP is employed for n-type doping of poly-silicon thin films on glass. We achieved a peak doping concentration of 6 × 1018 to 1 × 1019 cm-3 and a junction depth up to 350 nm, as determined by electrochemical capacitance-voltage profiling and secondary ion mass spectrometry. We evaluate the structural quality of the LCP-doped layers with cross-sectional transmission electron microscopy (XTEM), as well as ultraviolet reflectance measurements. The LCP-doped regions are of suitable material quality for device fabrication. The resulting sheet resistance and doping levels are promising for a back surface field for poly-silicon thin-film solar cells on glass (e.g., an n+/ n-/ p+/glass layer structure in superstrate configuration). |
| Databáze: | OpenAIRE |
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