Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

Autor:	C. Le Royer, B. Mohamad, J. Biscarrat, L. Vauche, R. Escoffier, J. Buckley, S. Becu, R. Riat, C. Gillot, M. Charles, S. Ruel, P. Pimenta-Barros, N. Posseme, P. Besson, F. Boudaa, C. Vannuffel, W. Vandendaele, A.G. Viey, A. Krakovinsky, M.-A. Jaud, R. Modica, F. Iucolano, R. Le Tiec, S. Levi, M. Orsatelli, R. Gwoziecki, V. Sousa
Rok vydání:	2022
Zdroj:	2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::44dbbb3d01be89be8061e02121c4b306 https://doi.org/10.1109/ispsd49238.2022.9813672 Zobrazit plný text záznamu