The effect of temperature gradient on the variation of surface topography and reflectivity of anisotropically etched silicon wafers
| Autor: | Ivo Kuřitka, Jan Kotěna, Magda Minaříková, Petr Smolka, Erik Wrzecionko, Martin Minařík, Michal Machovský, Aleš Mráček, Antonín Minařík |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element 02 engineering and technology 010402 general chemistry 01 natural sciences chemistry.chemical_compound Optics Etching (microfabrication) Wafer Electrical and Electronic Engineering Reactive-ion etching Composite material Instrumentation Potassium hydroxide business.industry Metals and Alloys 021001 nanoscience & nanotechnology Condensed Matter Physics Isotropic etching 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Temperature gradient chemistry Dry etching 0210 nano-technology business |
| Zdroj: | Sensors and Actuators A: Physical. 262:1-9 |
| ISSN: | 0924-4247 |
| DOI: | 10.1016/j.sna.2017.05.019 |
| Popis: | A novel approach to wet etching of silicon wafers (100) is described in this study. Homogenous organized surface structures were prepared by the utilization of self-organized flow in the etching solution (Benard-Marangoni thermocapillar instability). The driving force behind this process is a temperature gradient generated by the etching apparatus exclusively constructed for this research. The influences of temperature gradients (1–20 K) and etching time (20–55 min) were studied, with the potassium hydroxide/isopropyl alcohol etching solution. Obtained results indicate that self-organized flow can be utilized for specific and rapid etching, which allows significant variation of the topography and reflectivity of the silicon wafer surface textured in this way. |
| Databáze: | OpenAIRE |
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