| Autor: | V. Schwegler, Frank Habel, M. Scherer, S.-S. Schad, Christoph Eichler, M. Seyboth, M. Kamp |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
Silicon Band gap chemistry.chemical_element Nanotechnology Gallium nitride Crystal structure Nitride Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Silicon carbide Sapphire Electrical and Electronic Engineering |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 13:659-664 |
| ISSN: | 0957-4522 |
| DOI: | 10.1023/a:1020614310842 |
| Popis: | Different substrates for gallium nitride growth are discussed. The commercially relevant substrates, silicon carbide and sapphire, and the two most promising alternatives, silicon and gallium nitride, are compared in terms of suitability for epitaxial processes and in their effects on devices. An estimation on future market success is given. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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