Electron surface states in short-period superlattices: (GaAs)2/(AlAs)2(100)-c(4×4)
| Autor: | I. Bartoš, W. Schattke, T. Strasser, P. Jiříček, M. Cukr, Martin Adell |
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| Rok vydání: | 2006 |
| Předmět: |
Superlattice
Angle-resolved photoemission spectroscopy Surfaces and Interfaces Electronic structure Photon energy Condensed Matter Physics Surfaces Coatings and Films Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy Materials Chemistry Atomic physics Molecular beam epitaxy Surface states |
| Zdroj: | Surface Science. 600:3646-3649 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/j.susc.2006.01.069 |
| Popis: | The electronic structure of (GaAs)2/(AlAs)2(1 0 0)-c(4 × 4) superlattice surfaces was studied by means of angular-resolved photoelectron spectroscopy (ARUPS) in the photon energy range 20–38 eV. Four samples with different surface termination layers were grown and As-capped by molecular beam epitaxy (MBE). ARUPS measurements were performed on decapped samples with perfect c(4 × 4) reconstructed surfaces. An intensive surface state was, for the first time, observed below the top of the valence band. This surface state was found to shift with superlattices’ different surface termination in agreement with theoretical predictions. |
| Databáze: | OpenAIRE |
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