Quantum energy control of multiple-quantum-well structures by selective area mocvd and its application to photonic integrated devices
| Autor: | Toshihiro Kawano, Hirohisa Sano, Takayuki Tsutsui, T. Taniwatari, Suzuki Makoto, Masahiro Aoki |
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| Rok vydání: | 1994 |
| Předmět: |
Distributed feedback laser
Materials science Computer Networks and Communications business.industry Photonic integrated circuit Physics::Optics General Physics and Astronomy Substrate (electronics) Semiconductor Electro-absorption modulator Optoelectronics Energy level Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Photonics business |
| Zdroj: | Electronics and Communications in Japan (Part II: Electronics). 77:33-44 |
| ISSN: | 1520-6432 8756-663X |
| Popis: | Quantum energy control is proposed in the form of a multiple-quantum-well (MQW) structure fabricated by selective metal organic chemical vapor deposition (MOCVD) growth to obtain high-performance multiple-function semiconductor photonic integrated devices. Its fundamental principle and the applied photonic integrated device are discussed. In general, semiconductor photonic integrated devices require semiconductor layers with different bandgap-energy states for each structural device having a different function formed on the same semiconductor substrate. In this paper, the position-dependent growth speed and the growth-layer compositions on the substrate are controlled by selective MOCVD growth so that the quantum energy levels of the InGaAs/InP MQW structures grown simultaneously are varied over the substrate surface. As a result, a controllable range of the quantum energy level spanning over 200 meV and a high-quality crystal configuration of selectively grown layers comparable to that formed by conventional growth processes have been confirmed. Application of this new integration method required that we design a monolithic integrated device of a distributed feedback laser diode and an electric field absorption-type modulator, as well as a multiple-wavelength distributed feedback laser array. Despite the simple design method, good crystal quality of the selectively grown layers, good optical coupling between the devices, and good device performance were observed. |
| Databáze: | OpenAIRE |
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