Pure Co films of low resistivity and high conformality by low temperature thermal CVD/ALD using novel Co precursors

Autor:	Ivan Oschchepkov, Changhee Ko, Raphael Rochat
Rok vydání:	2017
Předmět:	Resistive touchscreen Thermal cvd Atomic layer deposition Materials science Stability test Chemical engineering Annealing (metallurgy) Electrical resistivity and conductivity Thermal stability Conductivity
Zdroj:	2017 IEEE International Interconnect Technology Conference (IITC).
DOI:	10.1109/iitc-amc.2017.7968940
Popis:	A new family of highly volatile alkylsilyl-functionality Co precursors, R 3 SiCo(CO) 4 , has been synthesized. One of them, Et 3 SiCo(CO) 4 , has been evaluated by low temperature thermal chemical vapor deposition (CVD) and atomic layer deposition (ALD), which gave low resistive (29 μΩ·cm) pure Co films with a good step overage. Dynamic stability test of Et 3 SiCo(CO) 4 also exhibited a better stability at 40°C and 50°C, compared to CCTBA, a conventional Co precursor.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::430daa5748a6ee41f79bd5164a85617a https://doi.org/10.1109/iitc-amc.2017.7968940 Zobrazit plný text záznamu