Structural and Optical Properties of Porous III-V Semiconductors GaAs, InP Prepared by Electrochemical Etching
| Autor: | I. Simkiene, N. L. Dmitruk, Valentinas Snitka, Igor Dmitruk, Natalia Berezovska, Denis O. Naumenko |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Scanning electron microscope Phonon Oxide Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Physics::Geophysics Condensed Matter::Materials Science symbols.namesake chemistry.chemical_compound Semiconductor Optics chemistry Ellipsometry symbols Optoelectronics Raman spectroscopy business Porosity Raman scattering |
| Zdroj: | MRS Proceedings. 1534:A99-A104 |
| ISSN: | 1946-4274 0272-9172 |
| DOI: | 10.1557/opl.2013.316 |
| Popis: | Properties of the electrochemically prepared porous III-V semiconductors, GaAs and InP, have been studied using scanning electron microscopy (SEM), atomic force microscopy (AFM), monochromatic multi-angle-of-incidence (MAI) ellipsometry, Raman scattering (RS), including confocal micro-Raman measurements. Two-layer oxide/porous structures have been observed for porous samples. The optical constants and filling factors of porous layers have been calculated in the frame of the effective medium approximation. The peculiarities of Raman spectra of porous GaAs and InP have been analyzed using the critical point analysis of the phonon dispersion. |
| Databáze: | OpenAIRE |
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