Characteristics of High-Threshold-Voltage Low-Loss 4H-SiC MOSFETs with Improved MOS Cell Structure
| Autor: | Ai Osawa, Masayuki Furuhashi, Toshikazu Tanioka, Yuji Ebiike, Masayuki Imaizumi |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Negative-bias temperature instability business.industry Mechanical Engineering Doping Electrical engineering Short-channel effect Condensed Matter Physics On resistance Threshold voltage Mechanics of Materials MOSFET Optoelectronics General Materials Science Cell structure Field-effect transistor business |
| Zdroj: | Materials Science Forum. 858:829-832 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.858.829 |
| Popis: | High threshold voltage low loss 600 V 4H-SiC MOSFETs have been fabricated successfully using a re-oxidation technique for gate oxides and an n-type doping in the Junction Field Effect Transistor region of the MOSFET with shrunk MOS cells. The MOSFET has exhibited a high threshold voltage of more than 4 V and a low specific on resistance of 5.2 mΩ·cm2 at 25 °C. The MOSFET has also exhibited a sufficient blocking characteristic at VG of 0 V at 150 °C. High speed switching with low switching losses has been demonstrated successfully using the MOSFET at 150 °C. |
| Databáze: | OpenAIRE |
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