| Autor: |
G. Braceras, M. Khare, D. Turner, Baozhen Li, Ernest Y. Wu, J. Greg Massey, Jordi Suñé, Ann Swift, S. Tous, M. Johnson, R. Bolam |
| Rok vydání: |
2009 |
| Předmět: |
|
| Zdroj: |
2009 IEEE International Electron Devices Meeting (IEDM). |
| DOI: |
10.1109/iedm.2009.5424340 |
| Popis: |
Based on fundamental understanding of oxide breakdown (BD) physics established for thin oxides, we demonstrate that product circuit malfunction such as SRAM V min failure due to intrinsic TDDB can be accurately predicted. This prediction is based on a viable methodology using power-law voltage acceleration and progressive BD. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
