Migration energy of vacancies in p-type silicon crystals

Autor:	T. A. Pagava, Z. V. Basheleishvili
Rok vydání:	2003
Předmět:	Silicon Chemistry Annealing (metallurgy) chemistry.chemical_element Electron Activation energy Irradiation P type silicon Atomic physics Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials
Zdroj:	Semiconductors. 37:1033-1036
ISSN:	1090-6479 1063-7826
DOI:	10.1134/1.1610113
Popis:	p-Si:B samples were irradiated with 8-MeV electrons. The values of the activation energy of annealing for K centers and for (V + B) complexes obtained from the curves of isochronous annealing of these centers are found to be equal to 0.915 and 1.6 eV, respectively. The volumetric measurements of photovoltage over the irradiated region make it possible to estimate the values of the migration energy of vacancies. The migration energy is found to be $$E_{V^{ + + } }^M \approx 0.6 eV$$ for positively charged vacancies and $$E_{V^0 }^M \approx 0.345 eV$$ for neutral vacancies.
Databáze:	OpenAIRE
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