Characteristics of molecular‐beam epitaxially grown pair‐groove‐substrate GaAs/AlGaAs multiquantum‐well lasers

Autor:	Masaya Mannoh, Keisuke Shinozaki, Makoto Ishii, Tonao Yuasa, Shigeya Naritsuka, Tomoyuki Yamada
Rok vydání:	1987
Předmět:	Materials science business.industry Physics::Optics General Physics and Astronomy Substrate (electronics) Epitaxy Laser law.invention Transverse mode Semiconductor laser theory law Optoelectronics business Molecular beam Lasing threshold Molecular beam epitaxy
Zdroj:	Journal of Applied Physics. 62:764-770
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.339730
Popis:	Growth and device characteristics of an index‐guided GaAs/AlGaAs multiquantum‐well (MQW) laser, called a pair‐groove‐substrate (PGS) MQW laser, are described in detail. The laser structure is fabricated by using single‐step molecular‐beam epitaxy on a (001) GaAs substrate with a pair of etched grooves along the 〈110〉 direction. A mesa between a pair of grooves, where the lasing action occurs, becomes narrow during growth, and the narrow mesa offers lateral waveguiding that stabilizes a fundamental transverse mode. The superior crystalline quality of the mesa top, which is examined by a microprobe photoluminescence technique, serves to lower the lasing threshold currents. The lasers with mesa widths below 2 μm show stable transverse mode operation with a low threshold current of 20 mA, as well as a high external differential quantum efficiency of 68%. The low threshold and high characteristic temperature accomplish a high‐temperature continuous‐wave operation at 153 °C for the lasers mounted on silicon he...
Databáze:	OpenAIRE
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