Very low surface recombination velocities on 2.5 Ω cm Si wafers, obtained with low-temperature PECVD of Si-oxide and Si-nitride
| Autor: | C. Leguijt, J.A. Eikelboom, W.C. Sinke, P.-P. Michiels, R.A. Steeman, P. Lölgen, L.A. Verhoef, Ajeet Rohatgi, Pasqualina M. Sarro, Z. Chen, P.H. Amesz |
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| Rok vydání: | 1994 |
| Předmět: |
Recombination velocity
Renewable Energy Sustainability and the Environment Chemistry Analytical chemistry Oxide Mineralogy Nitride Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Plasma-enhanced chemical vapor deposition Wafer Forming gas Recombination Common emitter |
| Zdroj: | Solar Energy Materials and Solar Cells. 34:177-181 |
| ISSN: | 0927-0248 |
| Popis: | In this paper we present the first measurements of very low surface recombination velocities ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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