| Autor: |
K. Ishikawa, Katsuhiko Mitani, Hiroo Masuda, Kazuhiro Mochizuki, Masaru Miyazaki, C. Kusano, Masahiko Kawata |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
[1991] GaAs IC Symposium Technical Digest. |
| DOI: |
10.1109/gaas.1991.172648 |
| Popis: |
A fabrication technology for AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with low base resistance and low collector capacitance is developed. Self-aligned AlGaAs/GaAs HBTs show a high cutoff frequency of 45 GHz and maximum oscillation frequency of 70 GHz at collector current of 3.5 mA, and were successfully applied to IC chip sets for 10 Gb/s optical transmission. Among the fabricated 10 Gb/s IC chip sets, an AGC amplifier with 20 dB gain and 13.7 GHz bandwidth and a decision circuit with 66 mVp-p of ambiguity at 10 Gb/s are obtained, which are fully applicable to 10 Gb/s systems. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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