Modification of the Material Surface by Boron Ions Based on Vacuum Arc Discharge Systems and a Planar Magnetron
| Autor: | Vasily Gushenets, A. V. Nikonenko, Alexey V. Vizir, Alexey G. Nikolaev, Efim Oks, V. P. Frolova, M. V. Shandrikov, Konstantin P. Savkin, Alexey S. Bugaev, G. Y. Yushkov |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Silicon 010308 nuclear & particles physics Analytical chemistry General Physics and Astronomy chemistry.chemical_element Vacuum arc Isotopes of boron Lanthanum hexaboride 01 natural sciences Cathode law.invention chemistry.chemical_compound chemistry law Sputtering 0103 physical sciences Wafer Boron |
| Zdroj: | Russian Physics Journal. 63:1820-1828 |
| ISSN: | 1573-9228 1064-8887 |
| DOI: | 10.1007/s11182-021-02239-z |
| Popis: | The principle of operation and the characteristics of the experimental equipment intended for the generation of boron ion plasma and beams are presented. The equipment comprises a vacuum arc source of boron ions with boron isotope separation in a magnetic field and a plasma generator for deposition of boron-containing coatings based on a planar magnetron sputter. Common to this equipment is the use of lanthanum hexaboride cathodes, but for planar magnetron, a pure boron cathode heated in the discharge is also used. It is shown that, when silicon wafer is implanted with beams of 10B+ and 11B+ boron isotope ions with doses of 1014–1016 ion/cm2, the isotopic effect of the diode properties of the implanted surface is observed. The results of studies of the properties of the obtained boron-containing coatings on model materials: stainless steel, crystal silicon, and E110 (Zr–1Nb) reactor alloy are presented. |
| Databáze: | OpenAIRE |
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