Design perspective against random dopant fluctuation and process variation for scaling multi-gate devices
| Autor: | Hideki Oka, Ryo Tanabe, Y. Ashizawa |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science Dopant business.industry Process (computing) Nanotechnology Hardware_PERFORMANCEANDRELIABILITY Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Process variation Modeling and Simulation Hardware_INTEGRATEDCIRCUITS Optoelectronics Sensitivity (control systems) Static random-access memory Electrical and Electronic Engineering business Scaling Random dopant fluctuation Communication channel |
| Zdroj: | Journal of Computational Electronics. 5:319-322 |
| ISSN: | 1572-8137 1569-8025 |
| DOI: | 10.1007/s10825-006-0010-0 |
| Popis: | Multi-gate devices such as DG (Double Gate), SG (Single Gate) and tri-gate, are extensively examined and expected to be one of the promising device structures beyond bulk MOSFETs. We demonstrate the basic characteristics considering random dopant fluctuation for novel device structures and study the sensitivity against process variations. Moreover, we build a 6T-SRAM cell considering random dopant in the channel and calculate the Static Noise Margin (SNM) directly from hp45 down to hp22. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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