Time-Resolved Photoluminescence in Heterostructures with InGaAs:Cr/GaAs Quantum Wells
| Autor: | O. V. Vikhrova, Yu. A. Danilov, Fernando Iikawa, P. B. Demina, M. A. G. Balanta, Yu. M. Kuznetsov, M. V. Dorokhin, M. V. Ved |
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| Rok vydání: | 2020 |
| Předmět: |
Condensed Matter::Quantum Gases
010302 applied physics Materials science Photoluminescence Condensed matter physics Condensed Matter::Other Doping chemistry.chemical_element Heterojunction 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Chromium chemistry Electric field 0103 physical sciences Charge carrier 0210 nano-technology Excitation Quantum well |
| Zdroj: | Semiconductors. 54:1341-1346 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782620100061 |
| Popis: | The results of studies of the time-resolved photoluminescence in semiconductor heterostructures containing two noninteracting InGaAs quantum wells in a GaAs matrix are reported. One of the quantum wells was undoped, and the other was uniformly doped with chromium atoms (InGaAs:Cr). It was shown that the introduction of Cr had a profound effect on the recombination lifetime of charge carriers in quantum wells. The change in the photoluminescence intensity after excitation cannot be described by a monoexponential decay function, which is attributed to a change in the built-in electric field of the surface barrier in the quantum wells because of screening by photoexcited charge carriers. |
| Databáze: | OpenAIRE |
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