GaN HEMT With Convergent Channel for Low Intrinsic Knee Voltage
| Autor: | Mengyuan Hua, Qingkai Qian, Jiacheng Lei, Song Yang, Zheyang Zheng, Jin Wei, Wenjie Song, Kevin J. Chen, Li Zhang |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Physics Power-added efficiency Condensed matter physics Amplifier Transistor Linearity Saturation velocity High-electron-mobility transistor Electron 01 natural sciences Electronic Optical and Magnetic Materials law.invention law 0103 physical sciences Electrical and Electronic Engineering Voltage |
| Zdroj: | IEEE Electron Device Letters. 41:1304-1307 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2020.3010810 |
| Popis: | When the gated channel region of a GaN high-electron-mobility transistor (HEMT) is configured into multiple sub-channels in parallel and separated by embedded isolating patterns, the effective resistance of the access regions could be reduced, and consequently, the knee voltage ( ${V}_{{\text {K}}}$ ) of the transistor could be lowered. In this work, each sub-channel is defined as a convergent funnel-like shape, with its width gradually shrunk from the source side to the drain side. Different from conventional channels with uniform width under the entire gate, the funnel-shaped channel could converge electrons as they transport from source side to drain side, which facilitates electrons’ acceleration toward saturation velocity under a smaller drain-to-source bias, leading to a reduced intrinsic ${V}_{{\text {K}}}$ in the gated channel. Thus, more desirable ${I}$ - ${V}$ characteristics and more balanced performance enhancement in RF linearity and power added efficiency are achieved at a low supply voltage, making the convergent-channel HEMT attractive for power amplifiers in mobile terminals. |
| Databáze: | OpenAIRE |
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