Contrast enhancement on crystalline silicon in polarized reflection mode tip-enhanced Raman spectroscopy
| Autor: | Joachim Schreiber, Quang Nguyen, Razvigor Ossikovski |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element Optical polarization Near and far field Polarization (waves) Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Superposition principle symbols.namesake Optics chemistry symbols Coherent anti-Stokes Raman spectroscopy Crystalline silicon Electrical and Electronic Engineering Physical and Theoretical Chemistry Raman spectroscopy business |
| Zdroj: | Optics Communications. 274:231-235 |
| ISSN: | 0030-4018 |
| DOI: | 10.1016/j.optcom.2007.01.057 |
| Popis: | Tip-enhanced Raman spectroscopy in reflection mode makes possible the nanoscale characterization of non-transparent samples, such as silicon, inaccessible in transmission mode. However, a particular feature of this technique is the superposition of the far-field Raman signal with the near-field one generated in the tip vicinity sometimes resulting in a low near-field-to-far-field contrast. By using a polarized configuration and orientation optimization of a (0 0 1) crystalline Si sample we were able to enhance significantly the contrast through reducing the far-field contribution, reaching a value of about 40. This contrast enhancement method can be applied in principle to any crystalline sample. |
| Databáze: | OpenAIRE |
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