Large-Scale CMOS-Compatible Process for growing Si-BC8 Nanowires
| Autor: | S. Quaranta, A. Latini, I. Mazzotta, Fabrizio Palma, Pietro Riello, F. Rigoni, Fernanda Irrera |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon business.industry Nanowire chemistry.chemical_element 02 engineering and technology Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Monocrystalline silicon chemistry Phase (matter) Phenomenological model Optoelectronics Direct and indirect band gaps Diamond cubic 0210 nano-technology business |
| Zdroj: | 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). |
| DOI: | 10.1109/eurosoi-ulis49407.2020.9365521 |
| Popis: | A novel, low temperature process for the growth of silicon nanowires containing a monocrystalline Si-BC8 phase is presented. Silicon atoms in Si-BC8 phase are arranged in body-centered-cubic unit cells resulting into a different energy-wavefactor diagram compared to the silicon diamond cubic phase. Indeed, Si-BC8 possesses a direct band gap as low as 30 meV at room temperature. These characteristics are highly desirable for a large variety of applications, requiring CMOS-compatible manufacturing. The growth was performed in a CVD reactor under exposure to microwaves, and employing Sn nanospheres and SiH 4 as catalyst and precursor gas, respectively. Microwaves allowed for selective heating of the metal catalyst while keeping the substrate at low temperature. Systematic structural analysis and a phenomenological model for Si-BC8 phase formation are discussed. |
| Databáze: | OpenAIRE |
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