Quantum well nonlinear microcavities
| Autor: | J.L. Oudar, B. G. Sfez, R. Azoulay, D. Pellat, R. Kuszelewicz |
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| Rok vydání: | 1992 |
| Předmět: |
Materials science
Bistability business.industry Physics::Optics Condensed Matter Physics Distributed Bragg reflector Active layer Optical bistability Finesse Optics Nonlinear medium Optoelectronics General Materials Science Electrical and Electronic Engineering business Refractive index Quantum well |
| Zdroj: | Superlattices and Microstructures. 12:89-92 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/0749-6036(92)90227-v |
| Popis: | We report on recent progress in reducing the power threshold of all-optical bistable quantum well vertical microcavities. Significant improvements are achieved through an increase of the cavity finesse, together with a reduction of the device active layer thickness. A critical intensity of 5 μW/μm 2 has been observed on a microcavity of finesse 250, with a nonlinear medium of only 18 GaAs quantum wells of 10 nm thickness. Further improvements of the Bragg mirror quality resulted in a finesse of 700 and a power-lifetime product of 15 fJ/μm 2 . Microresonator pixellation allows to obtain 2-dimensional arrays. A thermally-induced alloy-mixing technique is described, which produced a 110 meV carrier confinement energy, together with a refractive index change of −.012, averaged over the 2.6 μm nonlinear medium thickness. The resulting electrical and optical confinement is shown to improve the nonlinear characteristics, by limiting lateral carrier diffusion and light diffraction. |
| Databáze: | OpenAIRE |
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