| Autor: |
Janna R. B. Casady, Jeff B. Casady, Swapna Sunkari, Hrishikesh Das, Timothy Oldham |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
Materials Science Forum. :93-96 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.717-720.93 |
| Popis: |
In this work we present the epitaxial growth of 4H-SiC on 100mm 4° off-axis substrates grown in a multi-wafer CVD planetary reactor. Highly uniform epitaxial layers having thickness and doping uniformities of 1.7% and 1.4% respectively were grown in the production reactor with optimized process conditions at 8µm/hr and 30µm/hr growth rates. Process optimizations resulted in epitaxial layers with surface roughness (RMS) of 0.32nm. Epitaxial layers with a thickness of 53µm grown with a 30µm/hr growth process had minimal degradation in surface roughness (RMS of 0.39nm). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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