Low-temperature deposition of titanium nitride films from dialkylhydrazine-based precursors

Autor: Peggy J. McKarns, Charles H. Winter, Joseph T. Scheper, T. Suren Lewkebandara
Rok vydání: 1999
Předmět:
Zdroj: Materials Science in Semiconductor Processing. 2:149-157
ISSN: 1369-8001
DOI: 10.1016/s1369-8001(99)00012-8
Popis: The deposition of titanium nitride films from single-source precursors bearing alkylhydrazine-derived ligands is reported. The complex [Ti2Cl4(NN(CH3)2)2(NH2N(CH3)2)2] sublimes at 140–150°C (0.1 mmHg) and affords titanium nitride films in a chemical vapor deposition reactor at substrate temperatures of ⩾400°C. By contrast, structurally related single-source precursors containing alkylamine- or ammonia-derived ligands deposit titanium (IV) nitride chloride films at 400°C in the same reactor, and only afford titanium nitride films at ⩾475°C. The hydrazide(1−) complex [TiCl2(N(CH3)N(CH3)2)2] sublimes at 130°C (0.1 mmHg) and affords titanium nitride films at 600°C. At substrate temperatures of ⩽550°C, poorly adherent blue-colored coatings were obtained. The atmospheric pressure chemical vapor deposition reaction of titanium tetrachloride and 1,1-dimethylhydrazine affords titanium nitride films at >500°C, but gives titanium (IV) nitride chloride films at ⩽500°C. Characterization of the films obtained from the depositions is described. The results demonstrate that ligands derived from 1,1-dialkylhydrazines can be powerful reducing sources for high valent early transition metals, depending on the ligand coordination mode, and can lead to a significant reduction in deposition temperatures compared to traditional nitrogen sources in cases where a high valent metal source compound must be reduced to a lower oxidation state.
Databáze: OpenAIRE
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