OFF-State Leakage and Performance Variations Associated With Germanium Preamorphization Implant in Silicon–Germanium Channel pFET
| Autor: | Vishal A. Tiwari, Rama Divakaruni, Deleep R. Nair, Terence B. Hook |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Dopant Silicon 020208 electrical & electronic engineering Transistor chemistry.chemical_element Germanium 02 engineering and technology 01 natural sciences Electronic Optical and Magnetic Materials law.invention Silicon-germanium chemistry.chemical_compound chemistry law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Field-effect transistor Kinetic Monte Carlo Electrical and Electronic Engineering Leakage (electronics) |
| Zdroj: | IEEE Transactions on Electron Devices. 65:3654-3661 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2018.2858748 |
| Popis: | Parameter variations in the transistor characteristics with new materials and process steps pose an increasing challenge for CMOS scaling to nanometer feature size. Alternate channel materials such as silicon–germanium (SiGe) for p-type field effect transistor (pFET) at 32 nm and beyond are useful because of higher mobility and lower threshold voltage ( $\text{V}_{T}$ ) but suffer from higher gate-induced drain leakage (GIDL) and could be a source of additional variability. In this paper, experimental results, a noise-like approach called the statistical impedance field method, and atomistic kinetic Monte Carlo simulations are used to report that the elimination of prehalo Ge preamorphization implant (PAI) from the SiGe pFET process flow reduces GIDL and its variation due to systematic variations in gate length and width but increases the time-zero (static) random GIDL and performance variations. This is primarily due to random dopant position fluctuations in the extension region for off-state leakage ( ${I}_{ \mathrm{\scriptscriptstyle OFF}} $ ) variability and in the halo region at the drain sidewall for $\text{V}_{T}$ variability. However, the increase in random variability without Ge PAI reduces for lower supply voltages and, thus, offers advantages of reduced GIDL with the same electrostatics, lower systematic variations, and similar ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ random variability for scaled voltages. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|