Influence of Gate Dielectrics of Field-Effect Graphene Transistors on Current-Voltage Characteristics
| Autor: | Vladimir Labunov, I. A. Romanova, I. Yu. Shcherbakova, I. I. Abramov, N. V. Kolomeitseva |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science business.industry Graphene Gate dielectric Transistor Field effect 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials law.invention Computer Science::Hardware Architecture Computer Science::Emerging Technologies Current voltage law 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | Russian Microelectronics. 50:118-125 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739721010029 |
| Popis: | Field-effect graphene transistors (FGTs) based on single-layer graphene using the developed simplified combined self-consistent model are simulated. It is used to compare the results of calculating the current–voltage (I–V) characteristics of five devices with the same geometric parameters with different materials of the gate dielectric of the upper gate. The influence of the thickness of the dielectrics of the upper and lower gates on the transfer I–V characteristic of a dual-gate FGTs is analyzed |
| Databáze: | OpenAIRE |
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