The effect of the concentration of the majority charge carriers and irradiation intensity on the efficiency of radiation-defect production in n-Si crystals

Autor:	T. A. Pagava, Z. V. Basheleishvili
Rok vydání:	2002
Předmět:	Chemistry Analytical chemistry Charge carrier Charge (physics) Irradiation Radiation Condensed Matter Physics Atomic and Molecular Physics and Optics Intensity (heat transfer) Electronic Optical and Magnetic Materials
Zdroj:	Semiconductors. 36:1077-1078
ISSN:	1090-6479 1063-7826
DOI:	10.1134/1.1513847
Popis:	The effect of the concentration of the majority charge carriers (n) and the electron-flux density (ϕ) on the efficiency of radiation-defect production (η) in n-Si samples was studied. It is shown that the dependence η(ϕ) features a maximum, which shifts to larger values of ϕ as n increases. This effect is explained by assuming that there is an optimal relation between the concentrations of primary defects produced per unit time and those of the free charge carriers, which charge these defects.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::39b3094d145c4c438f6dd8c66d71429c https://doi.org/10.1134/1.1513847 Zobrazit plný text záznamu Plný text ve formátu PDF