The transient behavior of transistors due to ionized radiation pulses

Autor:	G. H. Hanson, R. S. Caldwell, D. S. Gage
Rok vydání:	1963
Předmět:	Ionized radiation Materials science business.industry law Transistor Optoelectronics Transient (oscillation) business law.invention
Zdroj:	Transactions of the American Institute of Electrical Engineers, Part I: Communication and Electronics. 81:483-491
ISSN:	0097-2452
DOI:	10.1109/tce.1963.6591381
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::393323052989f76eea2c470d863cc99c https://doi.org/10.1109/tce.1963.6591381 Zobrazit plný text záznamu