Thermal modeling of 7 nm node bulk fin-shaped field-effect transistors for device structure-aware design
| Autor: | Chuntaek Park, Ilgu Yun |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Fin business.industry Structure (category theory) 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials 0103 physical sciences Thermal Materials Chemistry Optoelectronics Node (circuits) Field-effect transistor Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | Semiconductor Science and Technology. 33:115014 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/1361-6641/aae2ea |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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