Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures
| Autor: | J. M. Barker, R. L. Henry, Stephen M. Goodnick, Alma Wickenden, David K. Ferry, Daniel D. Koleske |
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| Rok vydání: | 2002 |
| Předmět: |
Electron mobility
Drift velocity Materials science Condensed matter physics Field (physics) business.industry Algan gan Heterojunction Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optoelectronics Vector field Electrical and Electronic Engineering business Pulse-width modulation Voltage |
| Zdroj: | Microelectronic Engineering. 63:193-197 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(02)00627-5 |
| Popis: | AlGaN/GaN test structures, with an etched constriction have been fabricated and tested with, and without, a gate. A pulsed voltage input with a 200 ns pulse width and a four-point measurement were used in a 50 Ω environment to determine the room temperature velocity-field characteristic of the structures. A low field mobility of 250 cm2/V s and an estimated electron velocity of ∼ 2 × 107 cm/s was attained at a field of 180 kV/cm. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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