TID Impact on SEL Sensitivity in the Case of High Latchup Holding Voltage

Autor:	Alexander I. Chumakov, I. I. Shvetsov-Shilovskiy, Alexander A. Pechenkin, Alexander A. Novikov, E. N. Oblova
Rok vydání:	2021
Předmět:	Materials science Radiation sensitivity business.industry law Microelectronics Optoelectronics Integrated circuit Irradiation business Sensitivity (electronics) Voltage law.invention
Zdroj:	2021 IEEE 32nd International Conference on Microelectronics (MIEL).
DOI:	10.1109/miel52794.2021.9569140
Popis:	In an Integrated Circuit with high SEL holding voltage, pulsed-laser radiation sensitivity was found to change due to TID irradiation. The impact of TID on the DUT SEL holding voltage and SEL sensitivity was investigated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::376284c377f97912b5edb4c72afe53ed https://doi.org/10.1109/miel52794.2021.9569140 Zobrazit plný text záznamu