Organic field effect transistors with ferroelectric hysteresis
| Autor: | Karsten Henkel, Klaus Müller, Dieter Schmeiβer, Ioanna Paloumpa |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
business.industry Transistor Metals and Alloys Hardware_PERFORMANCEANDRELIABILITY Surfaces and Interfaces Ferroelectricity Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Organic semiconductor Non-volatile memory Capacitor Hysteresis Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Materials Chemistry Optoelectronics Field-effect transistor business Hardware_LOGICDESIGN Voltage |
| Zdroj: | Thin Solid Films. 515:7683-7687 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2006.11.063 |
| Popis: | The ferroelectric copolymer Poly(vinylidene fluoride trifluoroethylene) is used as insulating material for capacitor structures and organic field effect transistors. For capacitors, we find the typical hysteresis in the capacitance–voltage characteristic upon increasing the voltage scan window. A writing process with adequate electric fields causes shifts in the flatband voltage. Based on these results, we fabricate organic transistors with regioregular poly(3-hexylthiophene) as organic semiconductor. The transistors are constructed in bottom gate architecture with thin layers (100 nm) of spincoated copolymer as gate insulation. The drain source current of the transistor is reversible affected by the polarized gate, which gives opportunities for fabrication of organic nonvolatile memory elements. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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