Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (0 0 1) Ge substrate
| Autor: | Chanchana Thanachayanont, Somchai Ratanathammaphan, Aniwat Tandaechanurat, Zon, Somsak Panyakeow, Supachok Thainoi, Suwit Kiravittaya, Visittapong Yordsri, Songphol Kanjanachuchai, Noppadon Nuntawong, Suwat Sopitpan |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Morphology (linguistics) Materials science Anti-phase domain business.industry Nucleation 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Self assembled Inorganic Chemistry Quantum dot 0103 physical sciences Materials Chemistry Optoelectronics Growth rate 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 512:136-141 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2019.02.015 |
| Popis: | The effects of growth temperature, growth rate and local growth position on the morphology of self-assembled InSb/GaAs quantum dots (QDs) on (0 0 1) Ge substrate are investigated. It is found that for low growth rates, anti-phase domain (APD) boundaries formed during the growth of GaAs on Ge can effectively act as the preferential nucleation position of InSb QDs. For high growth rates, InSb/GaAs QDs nucleate on both the APD boundary and the APD surface, leading to high density-InSb QDs. The QD morphologies on the APD boundary and the APD surface are distinctly different. The roles of growth rate and local growth position on the morphology of realized QDs are described. By varying the growth conditions, low density and locally aligned QDs as well as high density InSb QDs can be obtained. |
| Databáze: | OpenAIRE |
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