Structural Strain in Single Layer Graphene Fabricated on SiC

Autor: Peng Jin, Wan Cheng Yu, Rui Qi Wang, Xiu Fang Chen, Xiaobo Hu, Peng Yu, Xian Gang Xu
Rok vydání: 2019
Předmět:
Zdroj: Materials Science Forum. 963:161-165
ISSN: 1662-9752
DOI: 10.4028/www.scientific.net/msf.963.161
Popis: Single layer graphene is fabricated on the Si face of silicon carbide through thermal decomposition. The thickness of graphene was checked by a combination of ex situ Kelvin probe force microscopy together with Raman spectroscopy and atomic force microscopy. The amount of residual strain induced is calculated to between 1.3% and 0.7%. Results also show that the magnitude of strain increased with growth time while the uniformity of strain improved.
Databáze: OpenAIRE