Band discontinuities and local interface composition in BeTe/ZnSe heterostructures

Autor:	Andreas Waag, G. Landwehr, F. Fischer, H. Dröge, Th. Litz, Hans-Peter Steinrück, M. Nagelstrasser
Rok vydání:	1998
Předmět:	Nanostructure Materials science X-ray photoelectron spectroscopy business.industry Interface (computing) Valence band Zinc compounds General Physics and Astronomy Optoelectronics Heterojunction Classification of discontinuities business Molecular beam epitaxy
Zdroj:	Journal of Applied Physics. 83:4253-4257
ISSN:	1089-7550 0021-8979
Popis:	Using photoelectron spectroscopy, we have investigated the band alignment at the interface of pseudomorphic BeTe/ZnSe(100) heterojunctions for different interface terminations. The heterostructures of high structural quality have been produced by molecular beam epitaxy; the interface termination was adjusted by variation of the growth parameters between the growth process of ZnSe and BeTe. The valence band offset for a Zn-rich BeTe/ZnSe interface is determined to be 1.26±0.15 eV, for the Se-rich BeTe/ZnSe interface a value of 0.46±0.15 eV is obtained. Our results show that the band alignment can be modified by the interface composition even for isovalent heterostructures.
Databáze:	OpenAIRE
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